Demonstration of Synaptic Behaviour in Flexible ReRAM Devices with PVPy/TiOx Bilayer for Neuromorphic Applications

This study presents usage of polyvinylpyrrolidone (PVPy), with a thin titanium oxide (TiOx) in bilayer combination primarily for demonstration of resistive switching. Fabricated flexible resistive random access memory (ReRAM) devices exhibit stable bipolar resistive switching behaviour low SET/RESET voltages (~ ±1 V), high data retention (> 6000 seconds), low device-to-device variability, and reliable multiple cycle operation (> 100 iterations) while maintaining decent on-off current ratio of ~102. These devices demonstrate synaptic behaviour with paired-pulse facilitation (PPF) with relaxation time constants of ~1.7 ms and ~102 ms for fast and slow phase respectively. Moreover, potentiation and depression were observed up to 500 pulses, confirming reliable and reproducible synaptic behaviour, indicating their capability to mimic biological synapses. The devices exhibit the dynamic transition between short-term and long-term plasticity, effectively mimicking critical neuronal processes. These findings underscore the potential of the bilayer configuration as switching layer in ReRAM devices for future non-volatile memory and neuromorphic computing applications.